187 citations · 397 across the 10 of their papers we have counts for
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Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires using the Valence Force Field Method
Hossein Karamitaheri, Neophytos Neophytou, Mohsen Karami Taheri +2
We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1-10nm . We use the modified valence force field method to compute th…
Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires
Neophytos Neophytou, Hans Kosina
It is suggested that low dimensionality can improve the thermoelectric (TE) power factor of a device, offering an enhancement of the ZT figure of merit. In this work the atomistic…
Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport
Neophytos Neophytou, Hans Kosina
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materi…
Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
Neophytos Neophytou, Gerhard Klimeck, Hans Kosina
Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applicatio…
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
Neophytos Neophytou, Hans Kosina
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tight-binding model is us…
Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass
Neophytos Neophytou, Gerhard Klimeck
A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON…