activity
20242026
collaborators

11 papers

cond-mat.supr-con2026

Strain-engineered long-distance supercurrent in an altermagnetic CrSb based-Josephson junction

Yifan Gao, Jin Yan, Junjie Wei +27

Altermagnetic materials, characterized by vanishing net magnetization and momentum-dependent spin splitting, provide a unique platform for realizing unconventional superconducting…

cond-mat.mtrl-sci2026

Terahertz frequency upconversion by coherently driving charge dynamics in the InSb/CdTe heterostructure

Pai Peng, Mingxiang Pan, Jiuming Liu +10

We investigate terahertz (THz) harmonic generation in the InSb/CdTe heterostructure, demonstrating, for the first time, efficient in-plane magnetic field-induced second-harmonic ge…

cond-mat.mes-hall2026

Topological Surface Charge Detection via Terahertz Time-domain Spectroscopy

Tong Shen, Yiyang Xie, Yucheng Dai +4

The topological magnetoelectric effect (TME) is a condensed-matter realization of the four-dimensional quantum Hall effect (4D-QHE), manifesting as quantized surface charge accumul…

cond-mat.mes-hall2026

Topological Surface Charge Detection via Active Capacitive Compensation: A Pathway to the 4D Quantum Hall Effect

Yuanze Li, Renfei Wang, Yifan Zhang +6

The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by , serves as a condensed-matter…

cond-mat.mes-hall2026

Stack of correlated insulating states in bilayer graphene kagome superlattice

Xinyu Cai, Fengfan Ren, Qiao Li +9

Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena-including superconductivity, magnetism, and correlated insulating behavior-arising f…

cond-mat.mes-hall2025

Observation of Quantized Charge Accumulation in a Quantum Anomalous Hall System

Yuanze Li, Jiahao Chen, Renfei Wang +6

The quantum anomalous Hall effect in magnetically doped topological insulators exhibits a quantized Hall conductance arising from the two-dimensional surface state…

cond-mat.mes-hall2025

Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures

Zhenghang Zhi, Hanzhi Ruan, Jiuming Liu +6

We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately…

physics.app-ph2025

Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface

Xiaoxiao Ma, Zhenghang Zhi, Weijie Deng +4

The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit c…

cond-mat.mes-hall2024

Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

Jiuming Liu, Bin Rong, Hua Bai +10

The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron…

cond-mat.mtrl-sci2024

Tunable interfacial Rashba spin-orbit coupling in asymmetric AlInSb/InSb/CdTe quantum well heterostructures

Hanzhi Ruan, Zhenghang Zhi, Yuyang Wu +11

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown AlInSb/InSb/CdTe quantum well heterostructures is reported. The effective band…

cs.ET2024

A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system

Yu Gu, Puyang Huang, Tianhao Chen +5

We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant compu…