5 citations · 5 across the 5 of their papers we have counts for
5 papers
A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices
Mohamed Yassine Bouhamidi, Chunhui Dai, Michel Stephan +8
Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small mol…
Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition
Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam +5
Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain the…
Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices
Johannes Mohr, Tyler Hennen, Daniel Bedau +2
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and dopi…
Magnetization dynamics driven by displacement currents across a magnetic tunnel junction
C. K. Safeer, Paul S. Keatley, Witold Skowroński +11
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequ…
Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design
Tyler Hennen, Leon Brackmann, Tobias Ziegler +5
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of anal…