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Daniel Bedau

4 papers hereh-index 214 citations7 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author2

Across the 3 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.str-el2
  • cond-mat.mes-hall1
  • physics.app-ph1
same name
  • Daniel Bedau — 3 papers

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

physics.app-ph2024

A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices

Mohamed Yassine Bouhamidi, Chunhui Dai, Michel Stephan +8

Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small mol…

cond-mat.str-el2024

Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition

Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam +5

Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain the…

cond-mat.str-el2024

Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices

Johannes Mohr, Tyler Hennen, Daniel Bedau +2

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and dopi…

cond-mat.mes-hall2024

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

C. K. Safeer, Paul S. Keatley, Witold Skowroński +11

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequ…

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