5 papers
OTTER - Two Transistor - One RRAM Architecture for Reliable In-Memory-Computing in 28 nm CMOS Technology
Yang Chen, Daniele Storelli, Xinyi Zhao +20
This work presents OTTER, a 28 nm CMOS platform co-integrated with TaOx-based valence-change mechanism (VCM) RRAM, demonstrating a two-transistor-one-memristive-device (2T1R) archi…
Improved selector behavior in ultrathin chromium-doped VO films
Johannes Mohr, Tyler Hennen, Yudi Wang +6
Devices based on the negative differential resistance effect in chromium doped VO are considered to be promising as selector elements for use in emerging memory technologie…
Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition
Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam +5
Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain the…
Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices
Johannes Mohr, Tyler Hennen, Daniel Bedau +2
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and dopi…
Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design
Tyler Hennen, Leon Brackmann, Tobias Ziegler +5
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of anal…