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physics.app-ph2023
Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue +16
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can…
cond-mat.mtrl-sci2023★ 10 cited
Impact of Zr substitution on the electronic structure of ferroelectric hafnia
Jinhai Huang, Ge-Qi Mao, Kan-Hao Xue +4
-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathr…