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cond-mat.mtrl-sci2026
Digital Etching of Single-Crystalline Silicon Fin Barriers Down to Sub-10 nm
Yu Wu, Teun A. J. van Schijndel, Anthony P. McFadden +3
This work presents a fabrication process to realize sub-10 nm-thick, high-aspect-ratio Si fins using high-resistivity float-zone single-crystal Si wafers. Following anisotropic wet…
cond-mat.mtrl-sci2026
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…