2 citations · 2 across the 5 of their papers we have counts for
4 papers · 1 filter
Digital Etching of Single-Crystalline Silicon Fin Barriers Down to Sub-10 nm
Yu Wu, Teun A. J. van Schijndel, Anthony P. McFadden +3
This work presents a fabrication process to realize sub-10 nm-thick, high-aspect-ratio Si fins using high-resistivity float-zone single-crystal Si wafers. Following anisotropic wet…
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…
Hybridization gap approaching the two-dimensional limit of topological insulator BiSb
Paul Corbae, Aaron N. Engel, Jason T. Dong +5
Bismuth antimony alloys (BiSb) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk…
Determining the bulk and surface electronic structure of -Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar +9
The surface and bulk states in topological materials have shown promise in many applications. Grey or -Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of the…