A. Engel

activity

20242026

collaborators

Showing cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2026

Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry

Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses +5

Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve eith…

cond-mat.mtrl-sci2024

Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate

Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9

The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…

cond-mat.mtrl-sci2024

Hybridization gap approaching the two-dimensional limit of topological insulator Bi $_{x}$ Sb $_{1 - x}$

Paul Corbae, Aaron N. Engel, Jason T. Dong +5

Bismuth antimony alloys (Bi $_{x}$ Sb $_{1 - x}$ ) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk…

Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry

Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate

Hybridization gap approaching the two-dimensional limit of topological insulator Bix​Sb1−x​

Hybridization gap approaching the two-dimensional limit of topological insulator Bi $_{x}$ Sb $_{1 - x}$