Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation

Jiaqi Zhou, Sen Zhao, Xiyuan Zhang +6

This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial verti…