12 citations · 14 across the 8 of their papers we have counts for
8 papers
Observation of High-Order Anisotropic Magnetoresistance in a Cubic Ferromagnet
Haoran Chen, Yue Chen, Yizi Feng +10
High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold…
Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory
Haoran Chen, Zhen Cheng, Yizi Feng +6
Utilizing the phenomenological theory based on crystal symmetry operation, we have established the complete angular dependencies of the galvanomagnetic effects, encompassing both a…
A self-learning magnetic Hopfield neural network with intrinsic gradient descent adaption
Chang Niu, Huanyu Zhang, Chuanlong Xu +14
Physical neural networks using physical materials and devices to mimic synapses and neurons offer an energy-efficient way to implement artificial neural networks. Yet, training phy…
Interfacial Perpendicular Magnetic Anisotropy of Ultrathin Fe(001) Film Grown on CoO(001) Surface
Tong Wu, Yunzhuo Wu, Haoran Chen +10
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin…
Field-free spin-orbit switching of canted magnetization in Pt/Co/Ru/RuO2(101) multilayers
Yunzhuo Wu, Tong Wu, Haoran Chen +5
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on…
Magnetostatic effect on spin dynamics properties in antiferromagnetic Van der Waals material CrSBr
Hongyue Xu, Nan Jiang, Haoran Chen +11
Van der Waals (vdW) antiferromagnets are exceptional platforms for exploring the spin dynamics of antiferromagnetic materials owing to their weak interlayer exchange coupling. In t…
Current-density-modulated Antiferromagnetic Domain Switching Revealed by Optical Imaging in Pt/CoO(001) Bilayer
Tong Wu, Haoran Chen, Tianping Ma +2
Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the cur…
Antisymmetric Planar Hall Effect in Rutile Oxide Films Induced by the Lorentz Force
Yongwei Cui, Zhaoqing Li, Haoran Chen +10
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the…