15 citations · 19 across the 6 of their papers we have counts for
1 paper · 1 filter
Xiaoyue Gao1, Zhuohui Liu, Bo Han +8
Hf0.5Zr0.5O2 (HZO) is a promising candidate for next generation ferroelectric memories and transistors. However, its ferroelectricity origin is still under debate due to the comple…