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20242026
most citedA 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

46 citations · 48 across the 9 of their papers we have counts for

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5 papers · 1 filter

cond-mat.mes-hall2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Petar Tomić, Patrick Bütler, Yuze Wu +17

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…

cond-mat.mes-hall2025

High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…

quant-ph2025

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…

cond-mat.mes-hall2025

Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits

Daniel Schroller, Daniel Sitter, Thomas Koch +12

Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc

cond-mat.mes-hall20251 cited

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements

Marc-Antoine Roux, Joffrey Rivard, Victor Yon +18

Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the ident…