activity
20072026
most citedEngineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus

88 citations · 407 across the 13 of their papers we have counts for

collaborators

14 papers

physics.app-ph2026

Energy Harvesting for Self-Powered Microsystems: A Critical Review of Materials, Power Management, and System Integration

Lyuye Lin, Feng Zhifu, Ermanno Miele +12

The relentless proliferation of the Internet of Things (IoT), wearable bioelectronics, and cyber-physical infrastructure has rendered the conventional electrochemical battery the s…

cond-mat.mtrl-sci2022★ 3 cited

Revealing the role of Σ3{112} Si grain boundary local structures in impurity segregation

Rita Maji, Eleonora Luppi, Elena Degoli

The interfacial structure of a silicon grain boundary (Si-GB) plays a decisive role on its chemical functionalization and has implications in diverse physical-chemical properties o…

cond-mat.mtrl-sci2022★ 3 cited

Comparison of long-range corrected kernels and range-separated hybrids for excitons in solids

Rita Maji, Elena Degoli, Monica Calatayud +2

The most accurate theoretical method to describe excitons is the solution of the Bethe-Salpeter equation in the GW approximation (GW-BSE). However, because of its computation cost,…

cond-mat.mtrl-sci2022

Insight into the inclusion of heteroatom impurities in Silicon structures

Rita Maji, Eleonora Luppi, Elena Degoli +1

The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on t…

cond-mat.mtrl-sci2022★ 3 cited

Effect of Strain on Interactions of Σ3{111} Silicon Grain Boundary with Oxygen Impurities from First Principles

Rita Maji, Julia Contreras-García, Eleonora Luppi +1

The interaction of grain boundaries (GBs) with inherent defects and/or impurity elements in multi-crystalline silicon play a decisive role in their electrical behavior. Strain, dep…

cond-mat.mtrl-sci2022★ 8 cited

The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study

Rita Maji, Julia Contreras-García, Nathalie Capron +2

Grain boundaries (GBs) are defects originating in multi-crystalline silicon during crystal growth for device Si solar cell fabrication. The presence of GBs changes the coordination…