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Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tuneable response time
Ajoy Biswas, Amandeep Kaur, Bhabani Prasad Sahu +5
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) β-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN…
p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique
Bhabani Prasad Sahu, Amandeep Kaur, Simran Arora +1
NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along…
Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films
Bhabani Prasad Sahu, Poonam Sharma, Santosh Kumar Yadav +2
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two…
Ni cluster embedded (111)NiO layers grown on (0001)GaN films using pulsed laser deposition technique
Simran Arora, Shivesh Yadav, Amandeep Kaur +3
(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and mag…