most citedSingle-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

1 citations · 2 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Jie Zhou, Haibo Wang, Yifu Guo +19

Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, th…

physics.app-ph2024★ 1 cited

Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Jie Zhou, Qiming Zhang, Jiarui Gong +14

Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…

physics.app-ph2024★ 1 cited

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Jie Zhou, Yifan Wang, Ziqian Yao +13

We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…

physics.optics2024

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

Jie Zhou, Daniel Vincent, Sudip Acharya +16

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…

physics.app-ph2024

AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO

Yang Liu, Yiran Li, Sudip Acharya +9

This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…