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cond-mat.mtrl-sci2026
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…
cond-mat.mtrl-sci2026
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…