4 citations · 4 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
MBE obtained n-CdO:Eu p-Si heterojunctions -- electron beam induced profiling, electrical and structural properties
E Przezdziecka, I Perlikowski, S Chusnutdinow +7
The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the…
cond-mat.mtrl-sci2024★ 4 cited
Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
Dawid Jarosz, Ewa Bobko, Marcin Stachowicz +11
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three differe…