1 citations · 1 across the 13 of their papers we have counts for
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Landau-like formalism for the thermal-runaway and filamentation instabilities in switching Mott devices
Aniket Bajaj, Anudeep Tullibilli, Arup Basak +2
Correlated oxides can switch to a low-resistance state when exposed to a voltage, making these insulator-to-metal transition materials promising candidates for memristor technology…
Nature of the 175-180 cm Raman Feature in Altermagnetic -MnTe
Pankaj Bhardwaj, Rajib Sarkar, Naresh Shyaga +6
The 175 cm Raman mode in -MnTe has long been assigned to the material's only symmetry-allowed phonon (), yet first-principles calculations consistently place this…
Operando Surface Probe Microscopy Reveals Electrochemical Origins of Reliability Variability in Hafnia Ferroelectrics
Anudeep Tullibilli, Kartick Biswas, Shubham Kumar Parate +1
Device-to-device and sample-to-sample variability remains a major obstacle to the reliable implementation of hafnia-based ferroelectrics, even in nominally identical structures fab…
Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation
Divya Jangra, Binoy Krishna De, Mukesh Kumar Dasoundhi +13
A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrP…
Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures
Kusampal Yadav, Kousik Das, Aditya Raj +7
We demonstrate room temperature electric field control of the anomalous Hall effect in epitaxial Ni80Fe20 (Py) BaTiO3 (BTO) La0.7Sr0.3MnO3 (LSMO) thin film heterostructures grown o…
Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…
Reactive Glass Metal Interaction under Ambient Conditions Enables Surface Modification of Gold Nanoislands
Sinorul Haque, Shweta R. Keshri, G. Ganesh +13
Stabilizing gold nanoparticles with tunable surface composition via reactive metal support interactions under ambient conditions remains a significant challenge. We discovered that…
Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…
Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3
Divya Jangra, Binoy Krishna De, Pragati Sharma +8
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…
Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Binoy Krishna De, V. G. Sathe, Divya +5
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…
Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…