5 citations · 6 across the 6 of their papers we have counts for
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Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…
Optical characterization of deep level defects in n-type AlInGaP for development of solid-state photomultiplier analogs
Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6
Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…
Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Wei Pan, D. Bruce Burckel, Catalin D. Spataru +16
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one espe…