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20232026
most citedTorsional Force Microscopy of Van der Waals Moirés and Atomic Lattices

14 citations · 27 across the 9 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2025

Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping

Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7

Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…

cond-mat.mtrl-sci2024★ 1 cited

Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett +7

Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channel…

cond-mat.mtrl-sci2024

Quantitative determination of twist angle and strain in Van der Waals moiré superlattices

Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar +9

Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these tec…

cond-mat.mtrl-sci2024★ 1 cited

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

Marisa Hocking, Christina E. Henzinger, Steven Tran +6

New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/…

cond-mat.mtrl-sci2023★ 14 cited

Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices

Mihir Pendharkar, Steven J. Tran, Gregory Zaborski +13

In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle…