activity
20242026
collaborators

5 papers

cond-mat.mes-hall2026

Unveiling the Scaling Potential of Drain Merge through Active (DMtA) in CFETs: Breaking the Super-Via Bottlenecks and Unlocking New PPA Boosters

Jingru Jiang, Haoran Lu, Kairong Guo +11

Drain merge (DM), a super via vertically connecting the common S/D terminals of stacked n/pFETs in Complementary FETs (CFETs), blocks further parasitic optimization and cell scalin…

cond-mat.mtrl-sci2025

Experimental Observation of Extremely Strong Defect-Phonon Scatterings in Semiconductor Single Crystals

Zifeng Huang, Jianbo Liang, Yuxiang Wang +5

The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extens…

cond-mat.mes-hall2025

Design Optimization of Flip FET Standard Cells with Dual-sided Pins for Ultimate Scaling

Rui Gui, Haoran Lu, Jiacheng Sun +7

Recently, we proposed a novel transistor architecture for 3D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dual-sided interconnects. With…

cond-mat.mes-hall2025

Overlay-aware Variation Study of Flip FET and Benchmark with CFET

Wanyue Peng, Haoran Lu, Jingru Jiang +5

In this work, we carried out an overlay-aware variation study on Flip FET (FFET) considering the impact on RC parasitics induced by the lithography misalignment in backside process…

cond-mat.mtrl-sci2024

Thermal Conductivity of Cubic Silicon Carbide Single Crystals Heavily Doped by Nitrogen

Zifeng Huang, Yunfan Yang, Da Sheng +7

High-purity cubic silicon carbide possesses the second-highest thermal conductivity among large-scale crystals, surpassed only by diamond, making it crucial for practical applicati…