3 citations · 4 across the 5 of their papers we have counts for
6 papers
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
Lixin Liu, Han Yan, Leyi Loh +8
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power d…
Crossover from quantum correlation to hot-carrier transport in scattering-tolerant 2D transistors
Debottam Daw, Houcine Bouzid, Sung-Gyu Lee +6
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a sta…
Ultra-clean interface between high k dielectric and 2D MoS2
Han Yan, Yan Wang, Yang Li +8
Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the inte…
High-efficiency WSe photovoltaics enabled by ultra-clean van der Waals contacts
Kamal Kumar Paul, Cullen Chosy, Soumya Sarkar +9
Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (…
Large Scale Manufacture of Phase Pure Two-Dimensional Metallic MoS2 Nanosheets
Ziwei Jeffrey Yang, Zhuangnan Li, James Moloney +9
Metallic monolayered [or two - dimensional (2D)] MoS2 nanosheets show tremendous promise for energy storage and catalysis applications. However, state-of-the-art chemical exfoliati…
Helium atom micro-diffraction as a characterisation tool for 2D materials
Nick von Jeinsen, Aleksandar Radic, Ke Wang +7
We present helium atom micro-diffraction as an ideal technique for characterization of 2D materials due to its ultimate surface sensitivity combined with sub-micron spatial resolut…