2 papers
cond-mat.mtrl-sci2008
Strain selectivity of SiGe wet chemical etchants
M. Stoffel, A. Malachias, T. Merdzhanova +6
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain select…
cond-mat2003
Prepyramid-to-pyramid transition of SiGe islands on Si(001)
A. Rastelli, H. von Kaenel, B. J. Spencer +1
The morphology of the first three-dimensional islands appearing during strained growth of SiGe alloys on Si(001) was investigated by scanning tunneling microscopy. High resolution…