1 citations · 1 across the 1 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2026
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
Wenlong Yao, Zhigang Li, Guobin Bai +5
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This…
physics.app-ph2026
Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications
Zhigang Li, Guobin Bai, Hengwei Cui +9
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided e…
cond-mat.mes-hall2024★ 1 cited
High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
Zhenzhen Kong, Zonghu Li, Yuchen Zhou +11
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensiona…