1 citations · 1 across the 2 of their papers we have counts for
3 papers
cond-mat.mes-hall2026
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
cond-mat.mes-hall2024★ 1 cited
High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
Zhenzhen Kong, Zonghu Li, Yuchen Zhou +11
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensiona…
cond-mat.mes-hall2023
Coupling of hole double quantum dot in planar germanium to a microwave cavity
Yuan Kang, Zong-Hu Li, Zhen-Zhen Kong +10
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approa…