7 citations · 14 across the 5 of their papers we have counts for
5 papers
Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell +12
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candida…
Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices
Nicolò D'Anna, Nareg Ghazikhanian, Erik S. Lamb +5
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond con…
Element-specific, non-destructive profiling of layered heterostructures
Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata +16
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightfor…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon +11
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen r…