activity
20082022
most citedXPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO - the role of oxygen imperfections

58 citations · 265 across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.mtrl-sci2022★ 21 cited

Comparative Analysis of the Electronic Energy Structure of Nanocrystalline Polymorphs of Y2O3 Thin Layers: Theory and Experiments

D. W. Boukhvalov, D. A. Zatsepin, Yu. A. Kuznetsova +2

The results of fabrication and characterization of atomic structure of nanocrystalline thin layers of Y2O3 in cubic and monoclinic phases is reported. Experimental data demonstrate…

cond-mat.mtrl-sci2019★ 8 cited

Fundamental Crystal Field Excitations in Magnetic Semiconductor SnO:Mn,Fe,Co,Ni

B. Leedahl, D. J. McCloskey, D. W. Boukhvalov +7

Directly measuring elementary electronic excitations in dopant metals is essential to understanding how they function as part of their host material. Through calculated crysta…

cond-mat.mtrl-sci2017★ 1 cited

The MRO-accompanied modes of Re-implantation into SiO2-host matrix: XPS and DFT based scenarios

A. F. Zatsepin, D. A. Zatsepin, D. W. Boukhvalov +3

The following scenarios of Re-embedding into SiO2-host by pulsed Re-implantation were derived and discussed after XPS-and-DFT electronic structure qualification: (i) low Re-impurit…

cond-mat.mtrl-sci2017★ 7 cited

Enhanced clustering tendency of Cu-impurities with a number of oxygen vacancies in heavy carbon-loaded TiO2 - the bulk and surface morphologies

D. A. Zatsepin, D. W. Boukhvalov, E. Z. Kurmaev +4

The over threshold carbon-loadings (~50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (~7 at.%) was made using pulsed ion-implantation technique in sequential mode wit…

cond-mat.mtrl-sci2016★ 58 cited

XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO - the role of oxygen imperfections

D. A. Zatsepin, D. W. Boukhvalov, N. V. Gavrilov +2

An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion b…

cond-mat.mtrl-sci2016★ 18 cited

Pleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO2

D. A. Zatsepin, D. W. Boukhvalov, E. Z. Kurmaev +3

The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-dopin…