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Shanshan Wang

4 papers hereh-index 10706 citations24 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author3

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci4
same name
  • Shanshan Wang — 6 papers, h 3
  • Shanshan Wang — 5 papers, h 3
  • Shanshan Wang — 4 papers, h 2
  • Shanshan Wang — 3 papers, h 4
  • Shanshan Wang — 3 papers, h 7
  • Shanshan Wang — 3 papers, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mtrl-sci2026

Nonradiative Multiphonon Model of Deep-Level Transient Spectroscopy: Beyond Henry-Lang Model

Menglin Huang, Shanshan Wang, Junjie Zhou +2

Deep-level transient spectroscopy (DLTS) is a key experimental method for defect characterization, yet its analysis remains controversial, and the two widely used models developed…

cond-mat.mtrl-sci2025

Electroluminescence of NV Color Centers in Diamond p-i-n Diodes mediated by Charge-state Dynamics

Ruirong Bai, Menglin Huang, Shanshan Wang +2

As the electroluminescence (EL) of NV color centers in diamond has been realized in p-i-n diodes,the underlying mechanism remains a puzzle for longer than a decade. In this study,u…

cond-mat.mtrl-sci2025

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Shanshan Wang, Menglin Huang, Su-Huai Wei +2

The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend…

cond-mat.mtrl-sci2025

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Junjie Zhou, Shanshan Wang, Menglin Huang +2

As a typical nonradiative multiphonon transition in semiconductors, carrier capture at defects is critical to the performance of semiconductor devices. Its transition rate is usual…

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