8 citations · 8 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2024
Oxygen vacancies kinetics in / memristive interfaces
C. Ferreyra, R. Leal Martir, D. Rubi +1
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…
cond-mat.mes-hall2022★ 8 cited
Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
Rodrigo Leal Martir, María José Sánchez, Myriam Aguirre +6
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually link…