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James H. Edgar

4 papers hereh-index 438 citations8 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3
  • cond-mat.mtrl-sci1
same name
  • James H. Edgar — 3 papers, h 1
  • James H. Edgar — 1 paper, h 5

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20242026
collaborators

4 papers

cond-mat.mes-hall2026

Enabling Electrical Readout of Néel vector reversal in a van der Waals Antiferromagnet

Raghvendra Posti, Ravi Kumar Bandepalli, Wenhao Liu +14

Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the Néel vector in antiferromagnets (AFMs) can enable the development of next-generati…

cond-mat.mes-hall2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

I-Hsuan Kao, Ravi Kumar Bandapelli, Zhenhong Cui +17

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetrie…

cond-mat.mtrl-sci2025

Charge state tuning of spin defects in hexagonal boron nitride

Jules Fraunié, Tristan Clua-Provost, Sébastien Roux +14

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to…

cond-mat.mes-hall2024

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Dacen Waters, Derek Waleffe, Ellis Thompson +9

Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtuall…

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