10 citations · 33 across the 6 of their papers we have counts for
6 papers
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…
Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
K. Vishwakarma, K. Lee, A. Kruv +8
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…
The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
Hongwei Tang, Dennis Lin, Subhali Subhechha +14
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
A. Kruv, M. J. van Setten, A. Chasin +12
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…
A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism
A. M. Paracha, Ph. Basset, F. Marty +3
In this paper, design, fabrication and characterization issues of a bulk silicon-based, vibration powered, electric energy generator are addressed. The converter is based on an In-…