activity
20072022
most citedSelf-biased Reconfigurable Graphene Stacks for Terahertz Plasmonics

145 citations · 225 across the 14 of their papers we have counts for

collaborators

14 papers

physics.optics2022★ 10 cited

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

Denis E. Tranca, Stefan G. Stanciu, Radu Hristu +2

Investigation techniques based on tip-enhanced optical effects, capable to yield spatial resolutions down to nanometers level, have enabled a wide palette of important discoveries…

cs.ET2020

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Elisabetta Corti, Joaquin Antonio Cornejo Jimenez, Kham M. Niang +5

In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the cros…

physics.app-ph2020★ 3 cited

Temperature Dependence of Reconfigurable Bandstop Filters Using Vanadium Dioxide Switches

Andrei A. Muller, Matteo Cavalieri, Adrian M. Ionescu

In this letter we report and investigate the temperature dependency of various radio frequency parameters (RF) for a fabricated reconfigurable bandstop filter with vanadium dioxide…

physics.app-ph2020★ 2 cited

3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits

Victor Asavei, Andrei A. Muller, Esther Sanabria-Codesal +2

The article proves first that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family. Furt…

physics.app-ph2020

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…

physics.ins-det2019

Negative Capacitance Ion-Sensitive Field-Effect Transistors with improved current sensitivity

Francesco Bellando, Ali Saeidi, Adrian M. Ionescu

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sens…