Epitaxial Growth of Rutile GeO${}_2$ via MOCVD

Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis +2

Rutile Germanium Dioxide (r-GeO${}_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga${}_2$O${}_3$ but offeri…