Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Jagori Raychaudhuri, Jayjit Mukherjee, Sudhir Kumar +3

In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\hat{I}¼$m). We have studied the effect of short ga…