Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength

Ekaterina Ponizovskaya Devine, Toshishige Yamada, Shih-Yuan Wang +1

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm all…