most citedDirect evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

2 citations · 2 across the 2 of their papers we have counts for

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2 papers

cond-mat.mtrl-sci2016

Study of Growth Properties of InAs Islands on Nucleation Sites Defined by Focused Ion Beam

R-Ribeiro Andrade, D. R. Miquita, T. L. Vasconcelos +5

This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular…

cond-mat.mtrl-sci2008★ 2 cited

Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

J. C. Gonz'alez, A. Malachias, J. C. de Sousa +3

We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron…