most citedDirect evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

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cond-mat.mtrl-sci2008★ 2 cited

Direct evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires

J. C. Gonz'alez, A. Malachias, J. C. de Sousa +3

We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron…