216 citations · 908 across the 47 of their papers we have counts for
47 papers
Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps
Mitsuharu Uemoto, Nahoto Funaki, Kazuma Yokota +2
Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO interface with atomic-scale steps are carried out to investigate the effect of NO a…
Valley filters using graphene blister defects from first principles
Mitsuharu Uemoto, Masaki Nishiura, Tomoya Ono
Valleytronics, which makes use of the two valleys in graphenes, attracts considerable attention and a valley filter is expected to be the central component in valleytronics. We pro…
Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO interface after NO annealing
Naoki Komatsu, Mizuho Ohmoto, Mitsuharu Uemoto +1
We propose the atomic structures of the 4H-SiC/SiO interface for the , , C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost la…
Theoretical investigation of vacancy related defects at 4H-SiC(000)/SiO interface after wet oxidation
Mukai Tsunasaki, Tomoya Ono, Mitsuharu Uemoto
The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000)/SiO interface after wet oxidation are investigated by…
Density functional study of twisted graphene -FePd heterogeneous interface
Mitsuharu Uemoto, Hayato Adachi, Hiroshi Naganuma +1
Graphene on -FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb…
First-principles study on structure and anisotropy of high N-atom density layer in 4H-SiC
Mitsuharu Uemoto, Naoki Komatsu, Yoshiyuki Egami +1
A nitridation annealing process is well employed to reduce interface trap states that degrade the channel mobility of 4H-SiC/SiO metal-oxide-semiconductor field-effect transi…