270 citations · 1.6k across the 39 of their papers we have counts for
4 papers · 1 filter
Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors
Bing Huang, Qiang Xu, Su-Huai Wei
Using physical insights and advanced first-principles calculations, we suggest that corundum is an ideal gate dielectric material for graphene transistors. Clean interface exists b…
Strain Control of Magnetism in Transition-Metal-Atom Decorated Graphene
Bing Huang, Jaejun Yu, Su-Huai Wei
We report a strain-controlled tuning of magnetism in transition-metal-atom-decorated graphene. Our first-principles calculations demonstrate that strain can lead to a sudden change…
Controlling doping in graphene through a SiC substrate: A first-principles study
Bing Huang, Hongjun Xiang, Su-Huai Wei
Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based o…
Ordered Semiconducting Nitrogen-Graphene Alloys
Hongjun Xiang, Bing Huang, Zhenyu Li +3
The interaction between substitutional nitrogen atoms in graphene is studied by performing first principles calculations. The nearest neighbor interaction between nitrogen dopants…