4 papers
Hidden integer quantum ferroelectricity in chiral Tellurium
Wei Luo, Sihan Deng, Muting Xie +3
Ferroelectricity is a cornerstone of functional materials research, enabling diverse technologies from non-volatile memory to optoelectronics. Recently, type-I integer quantum ferr…
Defect-Charge-Driven 90° Switching in HfO2
Muting Xie, Hongyu Yu, Zhihao Dai +3
Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180° and 90° switching, yet the microscopic nature of the 90° pathway remains unresolved. We show that the 90…
Role of Domain Walls on Imprint and Fatigue in HfO2-Based Ferroelectrics
Muting Xie, Hongyu Yu, Binhua Zhang +2
HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantl…
Switchable Ferroelectricity in Subnano Silicon Thin Films
Hongyu Yu, Shihan deng, Muting Xie +5
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films…