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Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
Arsalan Hashemi, Christopher Linderalv, Arkady V. Krasheninnikov +3
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly…
Band Bending and Valence Band Quantization at Line Defects in MoS
Clifford Murray, Camiel van Efferen, Wouter Jolie +6
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS, grown by molecular beam epitaxy, is investigated through high resolution scanning tunn…
First principles study of stability of MXenes under electron beam
Rina Ibragimova, Zhong-Peng Lv, Hannu-Pekka Komsa
Interactions of two-dimensional MXene sheets and electron beam of (scanning) transmission electron microscope are studied via first-principles calculations. We simulated the knock-…
Local vibrational modes of Si vacancy spin qubits in SiC
Z. Shang, A. Hashemi, Y. Berencén +4
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly materia…
Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers
Bo Wang, Yipu Xia, Junqiu Zhang +4
Mirror twin boundary (MTB) brings unique 1D physics and properties into two-dimensional transition metal dichalcogenides (TMDCs), but they were rarely observed in non-Mo-based TMDC…