activity
19992023
most citedEpitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates

74 citations · 122 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2023★ 74 cited

Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates

M. W. Denhoff, J. P. McCaffrey

Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2 buffer layers on (1102) sapphire. Both layers are epitaxial with the (110) direction of the CeO2 layer ali…

cond-mat.mes-hall2017★ 12 cited

Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

Alexandre W. Walker, Mike W. Denhoff

Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and…

cond-mat.mtrl-sci2017★ 1 cited

Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

Alexandre W. Walker, Mike W. Denhoff

The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various dis…

physics.chem-ph2012

Device model of silicon nanowire bioFETs

M. W. Denhoff

A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute elect…

cond-mat.mtrl-sci2008★ 31 cited

Charge carrier induced barrier height reduction at organic heterojunctions

S. W. Tsang, M. W. Denhoff, Y. Tao +1

In order to provide an accurate theoretical description of current density voltage (J-V) characteristics of an organic heterojunction device over a wide range of electric fields at…

cond-mat.other2008

A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact

Mike W. Denhoff

The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calcula…