6 papers · 1 filter
Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
Kira J. Martin, Autumn Y. Lee, Pranav Mahaadev +6
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizi…
Shining light on short-range atomic ordering in semiconductors alloys
Anis Attiaoui, Shunda Chen, Joseph C. Woicik +7
The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structur…
Epitaxial Growth of Anisotropic SnSe on GaAs(001) via Step-Edge Orientation Control
Pooja D. Reddy, Zahra N. Heussen, Kunal Mukherjee
Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sha…
Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions
Jarod E. Meyer, Biridiana Rodriguez, Leland Nordin +1
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infra…
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Kelly Xiao, Bryce Wong, Jarod Meyer +2
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elem…
Heteroepitaxial growth of highly anisotropic films on GaAs
Kelly Xiao, Virat Tara, Pooja D. Reddy +6
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In…