156 citations · 727 across the 16 of their papers we have counts for
10 papers · 1 filter
Reevaluating the electrical impact of atomic carbon impurities in MoS2
James Ramsey, Faiza Alhamed, Jonathan P. Goss +2
Transition metal dichalcogenides, a family of two-dimensional compounds, are of interest for a range of technological applications. MoS2, the most researched member of this family,…
Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
B G Breeze, C J Meara, X X Wu +13
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribut…
Electronic structure modification of Si-nanocrystals with F4 -TCNQ
A. Carvalho, J. Coutinho, M. Barroso +4
We use first-principles models to demonstrate how an organic oxidizing agent, F4 -TCNQ (7,7,8,8- tetracyano-2,3,5,6-tetrafluoroquinodimethane), modifies the electronic structure of…
Doping of Si nanoparticles: the effect of oxidation
A. Carvalho, S. Oberg, M. Barroso +2
The preferred location of boron and phosphorus in oxidized free-standing Si nanoparticles was investigated using a first-principles density functional approach. The calculated form…
Low energy graphene edge termination via small diameter nanotube formation
Viktoria V. Ivanovskaya, Alberto Zobelli, Philipp Wagner +4
We demonstrate that free graphene sheet edges can curl back on themselves,reconstructing as nanotubes. This results in lower formation energies than any other non-functionalised ed…
Ripple edge engineering of graphene nanoribbons
Philipp Wagner, Christopher P. Ewels, Viktoria V. Ivanovskaya +3
It is now possible to produce graphene nanoribbons (GNRs) with atomically defined widths. GNRs offer many opportunities for electronic devices and composites, if it is possible to…