Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

D. W. Boukhvalov, D. A. Zatsepin, D. Yu. Biryukov +3

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ion…