activity
20042023
most citedAntiferromagnetic spintronics

2.7k citations · 3k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2023★ 3 cited

Angular dependence of the electrically driven and detected ferromagnetic resonance in NiFe wires

Qiang Gao, Maxim Tsoi

We study the angular dependence of ferromagnetic resonance (FMR) in NiFe wires using both traditional microwave-absorption and electrical-detection techniques. In our…

cond-mat.mes-hall2019★ 1 cited

Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology

Morgan Williamson, Maxim Tsoi, Pin-Wei Huang +2

Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetores…

cond-mat.mtrl-sci2018★ 2 cited

Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)

Morgan Williamson, Shida Shen, Gang Cao +3

We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electri…

cond-mat.mtrl-sci2016★ 2.7k cited

Antiferromagnetic spintronics

V. Baltz, A. Manchon, M. Tsoi +3

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due…

cond-mat.mes-hall2015★ 18 cited

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

Cheng Wang, Heidi Seinige, Gang Cao +3

The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the materia…

cond-mat.mes-hall2014★ 48 cited

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

Cheng Wang, Heidi Seinige, Gang Cao +3

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is us…