6 papers
Optimizing Semiconductor Device Simulations through Low-Precision Arithmetic
Alexander Maeder, Denghui Lu, Nicolas Vetsch +6
Architectural changes in GPUs, especially the promotion of low-precision computational units, pose significant challenges to traditional, FP64-based high-performance computing (HPC…
Acceleration of Atomistic NEGF: Algorithms, Parallelization, and Machine Learning
Mathieu Luisier, Nicolas Vetsch, Alexander Maeder +8
The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo…
Ab-initio Quantum Transport with the GW Approximation, 42,240 Atoms, and Sustained Exascale Performance
Nicolas Vetsch, Alexander Maeder, Vincent Maillou +7
Designing nanoscale electronic devices such as the currently manufactured nanoribbon field-effect transistors (NRFETs) requires advanced modeling tools capturing all relevant quant…
Simulation of single hole spin qubit in strained triangular FinFET quantum devices
Ilan Bouquet, Jiang Cao, Mathieu Luisier
Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si…
Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation
Leonard Deuschle, Jiang Cao, Alexandros Nikolaos Ziogas +4
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller…
Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors
Chen Hao Xia, Leonard Deuschle, Jiang Cao +2
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely…