2 papers
cond-mat.mes-hall2024
Oxygen vacancies kinetics in / memristive interfaces
C. Ferreyra, R. Leal Martir, D. Rubi +1
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…
physics.app-ph2024
Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO-based devices
C. Ferreyra, M. Badillo, M. J. Sánchez +3
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization…