17 citations · 22 across the 7 of their papers we have counts for
7 papers
Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Kaijian Xing, Zherui Yang, Weiyao Zhao +17
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…
Artificial ferroelectric-like hysteresis in antiferroelectrics with non-uniform disorder
Yi Zhang, Xinyu Zhang, Zihao Zheng +27
Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electr…
Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films
Jiayi Qin, Josephine Si Yu See, Yanran Liu +19
Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, whi…
Superconducting Diode Effect in Gradiently Strained Nb0.5Ti0.5N Films
Zherui Yang, Shengyao Li, Shaoqin Peng +6
The superconducting diode effect (SDE), combining superconductivity with diode-like nonreciprocal current flow, recently emerges as an ideal candidate for zero-dissipation electron…
ChatGPT-Assisted Visualization of Atomic Orbitals: Understanding Symmetry, Mixed State, and Superposition
Huiping Han, Liang Wu
For undergraduate students newly introduced to quantum mechanics, solving simple Schrödinger equations is relatively straightforward. However, the more profound challenge lies in c…
Depth-resolved profile of the interfacial ferromagnetism in superlattices
J. R. Paudel, A. Mansouri Tehrani, M. Terilli +10
Emergent magnetic phenomena at interfaces represent a frontier in materials science, pivotal for advancing technologies in spintronics and magnetic storage. In this letter, we util…
Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
M. H. Shao, H. F. Liu, R. He +13
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applica…