Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He +2

This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra…